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This thesis presents a robust implementation of an electrothermal model for computer simulation of semiconductor devices. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT.
Tuesday, October 9, 2018
[PDF] Download General Electrothermal Semiconductor Device Simulation Kostenlos
[PDF] Download General Electrothermal Semiconductor Device Simulation Kostenlos
This thesis presents a robust implementation of an electrothermal model for computer simulation of semiconductor devices. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT.
This thesis presents a robust implementation of an electrothermal model for computer simulation of semiconductor devices. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT.
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